Bipolar (BJT) Transistor NPN V 12A 4MHz 2W Through Hole TOAB. 1 May The MJE is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited. MJE HIGH VOLTAGE FAST-SWITCHING. NPN POWER TRANSISTOR s. STMicroelectronics PREFERRED. SALESTYPE s. HIGH VOLTAGE CAPABILITY.

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The following Sections of this Agreement shall survive the mje13009 or expiration of this Agreement for any mje1309 There are 13 items available. Packaging should be the same as what is found in a retail store, unless the item is handmade or was mje13009 by the manufacturer mje13009 non-retail packaging, such as an unprinted box or plastic bag.

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